主電路母線和電容組寄生參數(shù)對(duì)開關(guān)暫態(tài)的影響

以一臺(tái)H 橋IGBT 功率單元為對(duì)象，基于部分單元等效電路（PEEC）方法建立直流母線的高頻等效電路，以基于最小二乘法的曲線擬合提取電容組的等效參數(shù)。以單橋臂電路實(shí)驗(yàn)中獲得的橋臂電壓的交流分量作為激勵(lì)，施加于由母線和電容組模型構(gòu)成的等效電路上進(jìn)行仿真，用母線電流的實(shí)測(cè)波形與仿真波形進(jìn)行比較驗(yàn)證等效電路的準(zhǔn)確性。以此電路為基礎(chǔ)，探討了直流母線和電容組的結(jié)構(gòu)與參數(shù)變化對(duì)暫態(tài)過程的影響以及暫態(tài)過程對(duì)寄生參數(shù)的敏感程度。結(jié)果表明，變換器的開關(guān)暫態(tài)過程對(duì)主電路母線和電容組的寄生電感參數(shù)的變化非常敏感。
Abstract: The equivalent circuit of power DC bus and capacitor bank of an H-bridge IGBT unit was constructed, where the bus model was built with partial element equivalent circuit(PEEC) method and the parasitic parameters of capacitor tank were extracted by curve fitting using least square method. The equivalent circuit was verified by comparing the measured current with simulation result by exerting the AC component of phase voltage to the equivalent circuit. Furthermore, the? transient process with different parameters of the equivalent circuit was studied. It is proved that the transient process is very sensitive to parasitic inductance of the equivalent circuit.
關(guān)鍵詞﹕直流母線；電磁干擾；等效電路；變換器
Keywords: DC Power Bus; Electromagnetic Interference (EMI); Equivalent Circuit; Converter