Thermal transient characteriza

Thermal transient characterization methodology for single-die and stacked structures:High-power semiconductor packages typically exhibit a
three-dimensional heat flow, resulting in large lateral changes
in chip and case surface temperature. For single-chip devices
we propose to use an unambiguous definition for the junctionto-
case thermal resistance as a key parameter, based on a transient
measurement technique with much higher repeatability
also for very low thermal resistances compared to a two-point
thermal resistance measurement. The technique is illustrated
on thermal transient measurements of power MOSFETs. A
comparison between different thermal coupling to the ambient
is used to demonstrate the method’s capability to reveal even
subtle internal details of the package. The concept is extended
to multi-chip and stacked-chip structures, where transfer impedances
have to be introduced. Here, the dynamic properties
of the package are important and complex impedance mapping
is the proper way to characterize the package.