過(guò)程增強(qiáng)提高IGBT的電機(jī)驅(qū)動(dòng)應(yīng)用效率

　　過(guò)程增強(qiáng)提高IGBT的電機(jī)驅(qū)動(dòng)應(yīng)用效率

　　選擇IGBT時(shí)，設(shè)計(jì)師面對(duì)的是一批建筑的選擇，有利于IGBT的一種形式，如對(duì)稱與不對(duì)稱阻塞，在另一個(gè)。本文將回顧由不同的IGBT架構(gòu)提供的設(shè)計(jì)方案。

　　絕緣柵雙極晶體管（IGBT）是一種常見(jiàn)的電機(jī)驅(qū)動(dòng)應(yīng)用的選擇，由于其高阻塞電壓和低成本相比，功率MOSFET具有類似的電壓等級(jí)。該技術(shù)允許變頻驅(qū)動(dòng)器的設(shè)計(jì)，這被看作是良好的節(jié)能系統(tǒng)。

　　IGBT提供的開(kāi)關(guān)能力，需要驅(qū)動(dòng)重要的逆變器級(jí)。通常情況下，一個(gè)600 V額定阻斷電壓是驅(qū)動(dòng)操作從200-240伏電源需要1200伏惠460 VAC的應(yīng)用。

　　The IGBT’s structure evolved from the power MOSFET during the 1980s， in response to the need to increase the blocking voltage. This was achieved by adding an extra PN junction to the drain of MOSFET architecture， creating a bipolar transistor structure and an overall NPNP semiconductor. As with most power transistors made today， the construction of the transistor is vertical rather than horizontal， with the collector of the PNP bipolar transistor placed on the backside of the die. A P or P+ tub that contains N-doped wells links the source/emitter and gate regions. Current flows through this tub into a comparatively wide N-doped drift region into the collector. However， because it has the insulated gate of a MOSFET， the device as a whole remains voltage-controlled rather than current-controlled. The gains of the interlocked bipolar transistors need to be carefully controlled to suppress operation as an NPNP thyristor.