低電壓超低功耗CMOS靜態(tài)存儲(chǔ)器IS62WV12816BLL

　　The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed， 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI‘s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields highperformance and low power consumption devices. When CS1 is HIGH （deselected） or when CS2 is LOW （deselected） or when CS1 is LOW， CS2 is HIGH and both LB and UB are HIGH， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The IS62WV12816ALL and IS62WV12816BLL are packaged in the JEDEC standard 48-pin mini BGA （6mm x 8mm） and 44-Pin TSOP （TYPE II）.