磁電阻材料及其應(yīng)用的研究進展

本文綜述了磁電阻(MR) 材料的研究進展,并對目前研究熱點的四類巨磁電阻(GMR) 材料進行了概括評述,側(cè)重論述MR 材料在信息存儲等領(lǐng)域的應(yīng)用,明確指出開發(fā)和應(yīng)用MR 材料的關(guān)鍵問題是提高各類GMR 材料的室溫MR 值和降低其工作磁場。
【關(guān)鍵詞】　MR 材料;各向異性磁電阻(AMR) 效應(yīng);GMR 效應(yīng);磁電阻隨機存儲器(MRAM) ;GMR 傳感器
【Abstract】　In this paper , the progress in the study of magnetoresistance (MR) materials is reviewed and the presently focused four classes of giant magnetoresistance(GMR) materials , particularly the applications of MR materials in information storage and so on. are dis2 cussed. We clearly point out that the key to exploitation and application of MR materials is to increase the room2temperature MR of GMR materials and decrease the external magnetic field.
【Key words】　magnetoresistance(MR) materials ; anisotropic magnetoresistance (AMR) effect ; giant magnetoresistance (GMR) ef2 fect ; magnetoresistance random access memory(MRAM) ; GMR sensor