服務(wù)介紹
隨著技術(shù)發(fā)展，第三代半導(dǎo)體功率器件開始由實(shí)驗(yàn)室階段步入商業(yè)應(yīng)用，未來應(yīng)用潛力巨大，這些新型器件測(cè)試要求更高的電壓和功率水平，更快的開關(guān)時(shí)間。
測(cè)試周期：
根據(jù)標(biāo)準(zhǔn)、試驗(yàn)條件及被測(cè)樣品量確定
產(chǎn)品范圍：
MOSFET、IGBT、DIODE、BJT，第三代半導(dǎo)體器件等分立器件，以及上述元件構(gòu)成的功率模塊
測(cè)試項(xiàng)目：
| 靜態(tài)參數(shù) | 符號(hào) |
| Drain to Source Breakdown Voltage | BVDSS |
| Drain Leakage Current | IDSS |
| Gate Leakage Current | IGSS |
| Gate Threshold Voltage | VGS(th) |
| Drain to Source On Resistance | RDS(on) |
| Drain to Source On Voltage | VDS(on) |
| Body Diode Forward Voltage | VSD |
| Internal Gate Resistance | Rg |
| Input capacitance | Cies |
| Output capacitance | Coes |
| Reverse transfer capacitance | Cres |
| Transconductance | gfs |
| Gate to Source Plateau Voltage | Vgs(pl) |
| 動(dòng)態(tài)參數(shù) | 符號(hào) |
| Turn-on delay time | td(on) |
| Rise time | tr |
| Turn-off delay time | td(off) |
| Fall time | tf |
| Turn-on energy | Eon |
| Turn-off energy | Eoff |
| Diode reverse recovery time | trr |
| Diode reverse recovery charge | Qrr |
| Diode peak reverse recovery current | Irrm |
| Diode peak rate of fall of reverse recovery current | dirr/dt |
| Total gate charge | QG |
| Gate-Emitter charge | QGC |
| Gate-Collector charge | QGE |
| 其他參數(shù) | 符號(hào) |
| thermal resistance | Rth |
| Unclamped Inductive Switching | UIS |
| Reverse biased safe operating area | RBSOA |
| Short circuit safe operation area | SCSOA |
