NTC-DDR3-4Gb-C-R10芯片資料The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits。 It is internally configured as an octal-bank DRAM。 The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank ， 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks。 These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications。The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks。 Inputs are latched at the cross point of differential clocks (CK rising and?? falling)。 All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion。These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1Vpower supply and are available in BGA packages。