SUPREM-III進(jìn)行集成電路離子注入的工藝模擬

隨著集成電路工藝的不斷發(fā)展，工藝模擬軟件功能也在不斷的改善，但不足之處也不
斷暴露出來，工藝模擬過程中沒有考慮儀器本身影響。所以在工藝模擬中有必要建立一個模型，本文以離子注入工藝為例,研究溝道效應(yīng)對離子注入工藝的影響,并在計算機(jī)上采用SUPREM-III完成離子注入工藝初始條件的編輯以及離子注入工藝模擬，并對模擬結(jié)果曲線進(jìn)行比較。
關(guān)鍵詞 離子注入; 溝道效應(yīng); 工藝模擬
Abstract With the rapid development in the process of intenrated circuits, the
function of the process simulation software has been improved constantly, but its
shortcoming appear sincreasingly. The influence of equipment on the process has not
been counted in. In order to promote the improvement of this situation, it is
necessary to establish an equipment model in process simulation. Taking the process
of ion implantation as example, some elementary research on ion implantation
equipment model considering the influence of the channeling effects on the process
is accomplished. The edit of process initial condition and ion implantation process
simulation are done on the computer. The simulation curves are also compared.
Key words: ion implantation ; channeling effects ; process simulation