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標(biāo)簽 > UnitedSiC
UnitedSiC便成為一家無晶圓廠公司，將資源集中在產(chǎn)品設(shè)計(jì)、研發(fā)和客戶支持上，在行業(yè)發(fā)展趨勢(shì)的帶領(lǐng)下，公司快速、有效地穩(wěn)步發(fā)展。
UnitedSiC SiC FET用戶指南
UnitedSiC FET-Jet計(jì)算器成為更好的器件選擇工具
UnitedSiC FET-Jet計(jì)算器讓為功率設(shè)計(jì)選擇SiC FET和SiC肖特基二極管變得輕而易舉。設(shè)計(jì)工程師只需：
寬帶隙半導(dǎo)體技術(shù)為實(shí)現(xiàn)更高效功率轉(zhuǎn)換打開大門
電動(dòng)車是車輪上的數(shù)據(jù)中心，具有工業(yè)規(guī)模的電動(dòng)機(jī)控制（圖1），它的可行性取決于牽引逆變器和充電電路的效率。效率每提高一個(gè)百
Qorvo 收購 UnitedSiC，擴(kuò)大電力電子業(yè)務(wù)范圍
通過收購 SiC 功率半導(dǎo)體公司 UnitedSiC，Qorvo 已將其影響力擴(kuò)展到快速增長(zhǎng)的電動(dòng)汽車 (EV)、工業(yè)電
UnitedSiC提供七個(gè)采用七引腳設(shè)計(jì)的新750V SiC FET
許多人選擇“七”這個(gè)數(shù)字是因?yàn)樗摹靶疫\(yùn)”屬性，而UnitedSiC選擇它則當(dāng)然是因?yàn)槠邆€(gè)引腳非常適合D2PAK半導(dǎo)體封
2022-08-01 標(biāo)簽： 半導(dǎo)體封裝 引腳 UnitedSiC 958 0
UnitedSiC（現(xiàn)為Qorvo）擴(kuò)展了其突破性的第4代 SiC FET產(chǎn)品組合, 通過采用TO-247-4引腳封裝的
UnitedSiC第四代技術(shù)提供TO247-4L封裝
UnitedSiC（現(xiàn)名Qorvo）擴(kuò)充了其1200V產(chǎn)品系列，將其突破性的第四代SiC FET技術(shù)推廣到電壓更高的應(yīng)用
UnitedSiC推出具有顯著優(yōu)勢(shì)的第四代SiC FET
2020年 750V第四代SiC FET 誕生時(shí)，它與650V第三代器件的比較結(jié)果令人吃驚，以 6毫歐 器件為例，品質(zhì)因
2022-05-23 標(biāo)簽： UnitedSiC 1182 0
UnitedSiC宣布推出行業(yè)先進(jìn)的高性能 1200 V 第四代 SiC FET
中國北京 -?2022 年 5 月 17 日 – 移動(dòng)應(yīng)用、基礎(chǔ)設(shè)施與航空航天、國防應(yīng)用中 RF 解決方案的領(lǐng)先供應(yīng)商
2022-05-17 標(biāo)簽： 移動(dòng)應(yīng)用 場(chǎng)效應(yīng)晶體管 UnitedSiC 2364 0
隨著我們的產(chǎn)品接近邊沿速率超快的理想半導(dǎo)體開關(guān)，電壓過沖和振鈴開始成為問題。適用于SiC FET的簡(jiǎn)單RC緩沖電路可以解
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
UnitedSiC推出具有顯著優(yōu)勢(shì)的第四代SiC FET
2020年 750V第四代SiC FET 誕生時(shí)，它與650V第三代器件的比較結(jié)果令人吃驚，以 6毫歐 器件為例，品質(zhì)因數(shù)RDS?A降了近一半，由于體二...
2022-05-23 標(biāo)簽：UnitedSiC 1182 0
寬帶隙半導(dǎo)體技術(shù)為實(shí)現(xiàn)更高效功率轉(zhuǎn)換打開大門
電動(dòng)車是車輪上的數(shù)據(jù)中心，具有工業(yè)規(guī)模的電動(dòng)機(jī)控制（圖1），它的可行性取決于牽引逆變器和充電電路的效率。效率每提高一個(gè)百分點(diǎn)都能促進(jìn)散熱需求降低、重量減...
隨著我們的產(chǎn)品接近邊沿速率超快的理想半導(dǎo)體開關(guān)，電壓過沖和振鈴開始成為問題。適用于SiC FET的簡(jiǎn)單RC緩沖電路可以解決這些問題，并帶來更高的效率增益。
UnitedSiC第四代技術(shù)提供TO247-4L封裝
UnitedSiC（現(xiàn)名Qorvo）擴(kuò)充了其1200V產(chǎn)品系列，將其突破性的第四代SiC FET技術(shù)推廣到電壓更高的應(yīng)用中。
UnitedSiC宣布推出行業(yè)先進(jìn)的高性能 1200 V 第四代 SiC FET
中國北京 -?2022 年 5 月 17 日 – 移動(dòng)應(yīng)用、基礎(chǔ)設(shè)施與航空航天、國防應(yīng)用中 RF 解決方案的領(lǐng)先供應(yīng)商 Qorvo?（納斯達(dá)克代碼：QR...
2022-05-17 標(biāo)簽：移動(dòng)應(yīng)用場(chǎng)效應(yīng)晶體管UnitedSiC 2364 0
UnitedSiC與益登科技簽署分銷協(xié)議 加速業(yè)界采用碳化硅技術(shù)
UnitedSiC宣布與益登科技（TWSE： 3048）簽署代理協(xié)議，將產(chǎn)品推向亞洲市場(chǎng)，為包括電動(dòng)汽車、電池充電、IT基礎(chǔ)設(shè)施、可再生能源和電路保護(hù)等...
UnitedSiC的FET-Jet計(jì)算器讓SiC FET選擇過程不再充滿猜測(cè)
為電源設(shè)計(jì)選擇初始半導(dǎo)體開關(guān)可能是一件繁雜的工作。UnitedSiC的新FET-Jet CalculatorTM可以簡(jiǎn)化這項(xiàng)工作并準(zhǔn)確預(yù)測(cè)系統(tǒng)性能。
UnitedSiC發(fā)布四款全新UF3C SiC FET器件，其RDS（ON）值低至7mΩ
UnitedSiC布將推出四種新型SiC FET，其RDS（ON）值可低至7mΩ，并可提供前所未有的性能和高效率，適用于電動(dòng)汽車（EV）逆變器、高功率D...
UnitedSiC在650V產(chǎn)品系列中新增7個(gè)SiC FET
碳化硅（SiC）功率半導(dǎo)體制造商UnitedSiC/美商聯(lián)合碳化硅股份有限公司 宣布，已經(jīng)為UJ3C（通用型）和UF3C（硬開關(guān)型）系列650V SiC...
UnitedSiC在UF3C FAST產(chǎn)品系列中新增兩種TO220-3L封裝選項(xiàng)
美國新澤西州普林斯頓 --- 新型功率半導(dǎo)體企業(yè)美商聯(lián)合碳化硅股份有限公司（UnitedSiC）宣布，在公司快速發(fā)展的650V SiC FET硬開關(guān)UF...
UnitedSiC（現(xiàn)為Qorvo）擴(kuò)展了其突破性的第4代 SiC FET產(chǎn)品組合, 通過采用TO-247-4引腳封裝的750V/6mOhm SiC F...
UnitedSiC推出具有最低RDS（on）的DFN 8x8格式FET
新發(fā)布的產(chǎn)品應(yīng)用范圍包括無線和電信系統(tǒng)中50～500KHz頻率范圍的LLC和相移全橋（PSFB）功率轉(zhuǎn)換，以及功率因數(shù)校正（PFC）中的標(biāo)準(zhǔn)硬開關(guān)等領(lǐng)域。
碳化硅（SiC）功率半導(dǎo)體制造商UnitedSiC于3月21日宣布達(dá)成與ADI公司（Analog Devices）的戰(zhàn)略投資和長(zhǎng)期供應(yīng)協(xié)議，具體條款尚未公布。
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